Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nanosource. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

WE PRESENT THE MOLECULAR BEAM EPITAXY FABRICATION AND OPTICAL PROPERTIES OF COMPLEX GAAS NANOSTRUCTURES BY DROPLET EPITAXY: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is deve...

Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates

We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable f...

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Surface Electron Microscopy of Ga Droplet Dynamics on GaAs (001)

We describe the design and application of a surface electron microscope which has been constructed to study the in situ growth dynamics occurring on III-V semiconductor surfaces during molecular beam epitaxy. Mirror electron microscopy and photo-emission electron microscopy (PEEM) are used to ellucidate the physics of Langmuir (free) evaporation of GaAs. Of particular interest is the formation ...